GROWTH MECHANISMS OF MOLECULAR-BEAM EPITAXY OF INP AND GAASXP1-X USING A LOW-ENERGY P+ ION-BEAM

被引：2

作者：

MARUNO, S

MORISHITA, Y

ISU, T

NOMURA, Y

OGATA, H

机构：

来源：

SURFACE SCIENCE | 1988年 / 201卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(88)90616-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：335 / 344

页数：10

共 11 条

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