POROUS SILICON LAYERS AND ITS OXIDE FOR THE SILICON-ON-INSULATOR STRUCTURE

被引：9

作者：

TAKAI, H ^{[1
]}

ITOH, T ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：222 / 225

页数：4

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