BIPOLAR TUNNELING FIELD-EFFECT TRANSISTOR - A 3-TERMINAL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE FOR HIGH-SPEED APPLICATIONS

被引：20

作者：

LEBURTON, JP ^{[1
]}

KOLODZEY, J ^{[1
]}

BRIGGS, S ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 19期

关键词：

D O I：

10.1063/1.99056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1608 / 1610

页数：3

共 24 条

[1] FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN A RESONANT-TUNNELING DIODE [J].

BROWN, ER ;

SOLLNER, TCLG ;

GOODHUE, WD ;

PARKER, CD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2381-2381

[2] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].

CAPASSO, F ;

SEN, S ;

GOSSARD, AC ;

HUTCHINSON, AL ;

ENGLISH, JH .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :573-576

[3] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J].

CAPASSO, F ;

MOHAMMED, K ;

CHO, AY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1853-1869

[4] RESONANT TUNNELING GATE FIELD-EFFECT TRANSISTOR [J].

CAPASSO, F ;

SEN, S ;

BELTRAM, F ;

CHO, AY .

ELECTRONICS LETTERS, 1987, 23 (05) :225-226

[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[6]

COLEMAN J, COMMUNICATION

[7]

DUKE CB, 1969, SOLID STATE PHYS S, V10, P207

[8] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].

ESAKI, L ;

MIYAHARA, Y .

SOLID-STATE ELECTRONICS, 1960, 1 (01) :13-&

[9] A RESONANT-TUNNELING BIPOLAR-TRANSISTOR (RBT) - A NEW FUNCTIONAL DEVICE WITH HIGH-CURRENT GAIN [J].

FUTATSUGI, T ;

YAMAGUCHI, Y ;

IMAMURA, K ;

MUTO, S ;

YOKOYAMA, N ;

SHIBATOMI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02) :L131-L133

[10] GALLIUM ARSENIDE TUNNEL DIODES [J].

HOLONYAK, N ;

LESK, IA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (08) :1405-1409

← 1 2 3 →