DIFFUSION OF ARSENIC IN SILICON - VALIDITY OF THE PERCOLATION MODEL

被引：27

作者：

MATHIOT, D

PFISTER, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.93836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1043 / 1044

页数：2

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