DIRECT OBSERVATION OF PRECIPITATES AND SELF-ORGANIZED NANOSTRUCTURES IN MOLECULAR-BEAM EPITAXY-GROWN HEAVILY-DOPED GAAS-SI

被引：4

作者：

GWO, S ^{[1
]}

MIWA, S ^{[1
]}

OHNO, H ^{[1
]}

FAN, JF ^{[1
]}

TOKUMOTO, H ^{[1
]}

机构：

[1] JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 21期

关键词：

D O I：

10.1063/1.114854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a cross-sectional scanning tunneling microscopy investigation of heavily Si doped [001]-oriented GaAs grown by molecular-beam epitaxy. At a very high doping level (6 x 10(19) cm(-3)), Si-doping induced precipitates are directly observed in XSTM images of the as-grown epitaxial layers. Most of the precipitates are found to have a characteristic oval shape with the long axis (similar to 80 Angstrom) along the growth direction. In contrast to the low diffusivity of randomly distributed Si dopants in the moderate doping regime, these precipitates are found to be highly mobile and spontaneously form ''nanowires'' during crystal growth. (C) 1995 American Institute of Physics.

引用

页码：3123 / 3125

页数：3

共 17 条

[1] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES [J].

ALBREKTSEN, O ;

ARENT, DJ ;

MEIER, HP ;

SALEMINK, HWM .

APPLIED PHYSICS LETTERS, 1990, 57 (01) :31-33

[2] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[3] TUNNELING SPECTROSCOPY OF MIDGAP STATES INDUCED BY ARSENIC PRECIPITATES IN LOW-TEMPERATURE-GROWN GAAS [J].

FEENSTRA, RM ;

VATERLAUS, A ;

WOODALL, JM ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2528-2530

[4] OBSERVATION OF BULK DEFECTS BY SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY - ARSENIC ANTISITE DEFECTS IN GAAS [J].

FEENSTRA, RM ;

WOODALL, JM ;

PETTIT, GD .

PHYSICAL REVIEW LETTERS, 1993, 71 (08) :1176-1179

[5]

FUJIMOTO I, 1986, INSTITUTE PHYSICS C, V79, P127

[6] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

GREINER, ME ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752

[7] DIRECT MAPPING OF ELECTRONIC-STRUCTURE ACROSS AL0.3GA0.7AS/GAAS HETEROJUNCTIONS - BAND OFFSETS, ASYMMETRICAL TRANSITION WIDTHS, AND MULTIPLE-VALLEY BAND STRUCTURES [J].

GWO, S ;

CHAO, KJ ;

SHIH, CK ;

SADRA, K ;

STREETMAN, BG .

PHYSICAL REVIEW LETTERS, 1993, 71 (12) :1883-1886

[8] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY [J].

HEIBLUM, M ;

WANG, WI ;

OSTERLING, LE ;

DELINE, V .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6751-6753

[9] DIRECT IMAGING OF DOPANTS IN GAAS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY [J].

JOHNSON, MB ;

ALBREKTSEN, O ;

FEENSTRA, RM ;

SALEMINK, HWM .

APPLIED PHYSICS LETTERS, 1993, 63 (21) :2923-2925

[10] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J].

KAWABE, M ;

MATSUURA, N ;

SHIMIZU, N ;

HASEGAWA, F ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L623-L624

← 1 2 →