LOW-TEMPERATURE EPITAXIAL-GROWTH OF INP BY REMOTE PLASMA-ASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：5

作者：

SUGINO, T

KAWARAI, K

MAEDA, M

SHIRAFUJI, J

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka, 565

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 139卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90023-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial growth of InP at 400-degrees-C or below has been carried out by using remote plasma-assisted metalorganic chemical vapor deposition (RPMOCVD). Source materials of trimethylindium (TMI) and phosphine (PH3) are decomposed by remote hydrogen plasma. The increased RF power for exciting remote plasma improves the surface morphology of epitaxial layers. Epitaxial growth of InP layers with smooth mirror surface is achieved at a temperature as low as 275-degrees-C, an RF power of 75 W and a gas pressure of 3 Torr. The growth temperature is much lower than the thermal decomposition temperature of TMI and PH3. No strong dependence of the growth rate on the substrate temperature is demonstrated.

引用

页码：15 / 18

页数：4

共 10 条

[1] REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF GAP WITH INSITU GENERATION OF PHOSPHINE PRECURSORS [J].