REDISTRIBUTION OF AS DURING PD2SI FORMATION - ELECTRICAL MEASUREMENTS

被引：25

作者：

WITTMER, M ^{[1
]}

TING, CY ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：699 / 705

页数：7

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共 17 条

[1] ANTONIADIS D, 1978, 50192 STANF U TECHN
[2] CONTACT RESISTANCE AND CONTACT RESISTIVITY
BERGER, HH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 507 - &
[3] MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &
[4] BINDELL JB, 1980, IEEE T ELECTRON DEV, V27, P420, DOI 10.1109/T-ED.1980.19878
[5] Chu WK., 1978, BACKSCATTERING SPECT
[6] SHALLOW SILICIDE CONTACTS FORMED BY USING CODEPOSITED PT2SI AND PT1.2 SI FILMS
EIZENBERG, M
FOLL, H
TU, KN
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 547 - 549
[7] EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS
EIZENBERG, M
OTTAVIANI, G
TU, KN
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 87 - 89
[8] QUANTITATIVE THEORY OF RETARDED BASE DIFFUSION IN SILICON N-P-N STRUCTURES WITH ARSENIC EMITTERS
FAIR, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 283 - 291
[9] GROVE AS, 1967, PHYS TECHNOL S, P298
[10] REDISTRIBUTION OF IMPLANTED PHOSPHORUS AFTER PLATINUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES
KIKUCHI, A
SUGAKI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3690 - 3693