HIGH DOPING LEVEL BY RAPID THERMAL ANNEALING OF MG-IMPLANTED GAAS/GAALAS FOR HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：10

作者：

DAOUDKETATA, K

DUBONCHEVALLIER, C

BESOMBES, C

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 05期

关键词：

D O I：

10.1109/EDL.1987.26604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / 207

页数：3

共 14 条

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[7] COMPREHENSIVE STUDY OF AUMN P-TYPE OHMIC CONTACT FOR GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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