CAVERNOUS UNDERCUTS APPEARING IN REACTIVE ION ETCHED SUBMICRON-WIDE DEEP TRENCHES

被引:28
作者
OHKI, S
ODA, M
AKIYA, H
SHIBATA, T
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期
关键词
D O I
10.1116/1.583637
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1611 / 1616
页数:6
相关论文
共 18 条
[1]   STRUCTURAL EFFECTS ON A SUB-MICRON TRENCH PROCESS [J].
CHIN, DJ ;
DHONG, SH ;
LONG, GJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) :1705-1707
[2]   AN EXPERIMENTAL 4-MBIT CMOS DRAM [J].
FURUYAMA, T ;
OHSAWA, T ;
WATANABE, Y ;
ISHIUCHI, H ;
WATANABE, T ;
TANAKA, T ;
NATORI, K ;
OZAWA, O .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (05) :605-611
[3]   ENERGY DISSIPATION BY IONS IN KEV REGION [J].
LINDHARD, J ;
SCHARFF, M .
PHYSICAL REVIEW, 1961, 124 (01) :128-+
[4]   MECHANISM OF SILICON ETCHING BY A CF4 PLASMA [J].
MAUER, JL ;
LOGAN, JS ;
ZIELINSKI, LB ;
SCHWARTZ, GC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1734-1738
[5]   SIMULATION OF PLASMA-ASSISTED ETCHING PROCESSES BY ION-BEAM TECHNIQUES [J].
MAYER, TM ;
BARKER, RA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :757-763
[6]   INVESTIGATION OF PLASMA-ETCHING MECHANISMS USING BEAMS OF REACTIVE GAS IONS [J].
MAYER, TM ;
BARKER, RA ;
WHITMAN, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :349-352
[7]  
MOLIERE G, 1947, Z NATURFORSCH A, V2, P133
[8]  
Nakajima S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P240
[9]  
ODA M, 1984, 6TH P S DRY PROC, P115
[10]  
OHKI S, UNPUB J VAC SCI TE B