ION-BEAM SYSTEM-DESIGN FOR ULSI DEVICE REQUIREMENTS

被引：6

作者：

WHITE, NR

机构：

[1] Applied Materials Implant Division, Horsham, West Sussex RH13 5PY England, Foundry Lane

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96179-O

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The requirements of ULSI devices are placing stringent demands on ion source design, ion beam optics and system design. The problems include lower beam energies, the need for precisely controlled profiles both at low and high energies, wafer charging control, and ion beam purity. This paper discusses the physics of the ion beam, specifically the plasma that exists within the ion beam, as it affects these problems.

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页码：287 / 295

页数：9

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