CHARGE TRAPPING PROPERTIES IN THIN OXYNITRIDE GATE DIELECTRICS PREPARED BY RAPID THERMAL-PROCESSING

被引:19
作者
LO, GQ
TING, WC
SHIH, DK
KWONG, DL
机构
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin
关键词
D O I
10.1063/1.103273
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, effects of post-nitridation anneals on charge trapping properties and charge-to-breakdown (Qbd) of thin (∼8.6 nm) rapidly thermal nitrided (RTN) gate SiO2 have been studied. Post-nitridation anneals consist of either rapid thermal reoxidation (RTO) in pure O2 or rapid thermal anneal (RTA) in pure N2 ambient. Both the gate voltage shift (ΔVg) and flatband voltage shift (ΔVfb) have been used to characterize the charge trapping properties under Fowler-Nordheim electron injection. It is found that both RTO and RTA reduce ΔVfb and/or ΔVg resulting from the reduction of trapped electrons as well as high-field stress-induced positive charge generation. Positive charge generation resulting from either donor-type interface state generation or trapped holes is discussed. Qbd of RTN SiO2 has been improved after RTO, and can be even larger than that of the thermal SiO2. RTA of RTN SiO2 in N2 also improves Qbd; however, the charge trapping behavior is different from that of RTO/RTN SiO2. The physical mechanism is discussed to account for the observation.
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页码:979 / 981
页数:3
相关论文
共 11 条
[1]   COMMON ORIGIN FOR ELECTRON AND HOLE TRAPS IN MOS DEVICES [J].
ASLAM, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2535-2539
[2]   ON PHYSICAL MODELS FOR GATE OXIDE BREAKDOWN [J].
HOLLAND, S ;
CHEN, IC ;
MA, TP ;
HU, C .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :302-305
[3]   ELECTRICAL AND PHYSICAL-PROPERTIES OF ULTRATHIN REOXIDIZED NITRIDED OXIDES PREPARED BY RAPID THERMAL-PROCESSING [J].
HORI, T ;
IWASAKI, H ;
TSUJI, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :340-350
[4]  
Jayaraman R., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P668
[5]  
Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190
[6]   EFFECTS OF AVALANCHE INJECTION OF ELECTRONS INTO SILICON DIOXIDE - GENERATION OF FAST AND SLOW INTERFACE STATES [J].
LAI, SK ;
YOUNG, DR .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6231-6240
[7]  
LIANG MS, 1984, IEEE T ELECTRON DEV, V31, P1238, DOI 10.1109/T-ED.1984.21694
[8]   METAL-OXIDE-SEMICONDUCTOR CHARACTERISTICS OF RAPID THERMAL NITRIDED THIN OXIDES [J].
SHIH, DK ;
CHANG, WT ;
LEE, SK ;
KU, YH ;
KWONG, DL ;
LEE, S .
APPLIED PHYSICS LETTERS, 1988, 52 (20) :1698-1700
[9]   RADIATION EFFECTS IN NITRIDED OXIDES [J].
TERRY, FL ;
AUCOIN, RJ ;
NAIMAN, ML .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :191-193
[10]   REDUCTION OF ELECTRON AND HOLE TRAPPING IN SIO2 BY RAPID THERMAL ANNEALING [J].
WEINBERG, ZA ;
YOUNG, DR ;
CALISE, JA ;
COHEN, SA ;
DELUCA, JC ;
DELINE, VR .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1204-1206