FORMATION OF MOSI2 BY PULSED ELECTRON-BEAM IRRADIATION ONTO A VAPOR-DEPOSITED MOLYBDENUM SILICON STRUCTURE

被引：9

作者：

SUZUKI, S ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,TOKYO 160,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 09期

关键词：

D O I：

10.1063/1.94098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：797 / 799

页数：3

共 7 条

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4027-4032

[2] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

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[3] REACTION-KINETICS OF MOLYBDENUM THIN-FILMS ON SILICON(111) SURFACE [J].

GUIVARCH, A ;

AUVRAY, P ;

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LECUN, M ;

BOULET, JP ;

HENOC, P ;

PELOUS, G ;

MARTINEZ, A .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :233-237

[4] PULSED E-B APPARATUS AND ANNEALING OF ION-IMPLANTED SILICON [J].

ITOH, T ;

TAMURA, H ;

RAO, DX ;

OHKUBO, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :2032-2034

[5] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[6] METAL SILICON REACTIONS INDUCED BY CW SCANNED LASER AND ELECTRON-BEAMS [J].

SHIBATA, T ;

SIGMON, TW ;

REGOLINI, JL ;

GIBBONS, JF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :637-644

[7]

Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

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