INTERFACE ROUGHNESS SCATTERING IN SEMICONDUCTING AND SEMIMETALLIC INAS-GA1-XINXSB SUPERLATTICES

被引:60
作者
HOFFMAN, CA [1 ]
MEYER, JR [1 ]
YOUNGDALE, ER [1 ]
BARTOLI, FJ [1 ]
MILES, RH [1 ]
机构
[1] HUGHES RES LABS,MALIBU,CA 90265
关键词
D O I
10.1063/1.110800
中图分类号
O59 [应用物理学];
学科分类号
摘要
An analysis of magnetotransport results for InAs-Ga1-xInxSb superlattices with a range of layer thicknesses demonstrates that interface roughness scattering dominates the electron mobility under most conditions of interest for infrared detector applications. However, the dependence on well thickness is much weaker than the d1(6) relation observed in other systems with thicker barriers, which is consistent with predictions based on the sensitivity of the energy levels to roughness fluctuations. Theory also correctly predicts an abrupt mobility decrease at the semiconductor-to-semimetal transition point, as well as the coexistence of two electron species in semimetallic samples.
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收藏
页码:2210 / 2212
页数:3
相关论文
共 16 条
[1]   INTERFACE ROUGHNESS SCATTERING IN INAS/ALSB QUANTUM-WELLS [J].
BOLOGNESI, CR ;
KROEMER, H ;
ENGLISH, JH .
APPLIED PHYSICS LETTERS, 1992, 61 (02) :213-215
[2]   FAR-INFRARED PHOTORESPONSE OF THE INAS/GAINSB SUPERLATTICE [J].
CAMPBELL, IH ;
SELA, I ;
LAURICH, BK ;
SMITH, DL ;
BOLOGNESI, CR ;
SAMOSKA, LA ;
GOSSARD, AC ;
KROEMER, H .
APPLIED PHYSICS LETTERS, 1991, 59 (07) :846-848
[3]   INAS GA1-XINXSB STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHOW, DH ;
MILES, RH ;
SODERSTROM, JR ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :710-714
[4]   GROWTH OF INAS/GA1-XINXSB INFRARED SUPERLATTICES [J].
CHOW, DH ;
MILES, RH ;
NIEH, CW ;
MCGILL, TC .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :683-687
[5]   ELECTRONIC TRANSPORT-PROPERTIES OF A TWO-DIMENSIONAL ELECTRON-GAS IN A SILICON QUANTUM-WELL STRUCTURE AT LOW-TEMPERATURE [J].
GOLD, A .
PHYSICAL REVIEW B, 1987, 35 (02) :723-733
[6]   INVESTIGATION OF MOLECULAR-BEAM EPITAXIALLY GROWN INAS/(IN,GA)SB STRAINED-LAYER SUPERLATTICES [J].
GOLDING, TD ;
SHIH, HD ;
ZBOROWSKI, JT ;
FAN, WC ;
HORTON, CC ;
CHOW, PC ;
VIGLIANTE, A ;
COVINGTON, BC ;
CHI, A ;
ANTHONY, JM ;
SCHAAKE, HF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :880-884
[7]   INTERFACE ROUGHNESS SCATTERING AND ELECTRON MOBILITIES IN THIN GAAS QUANTUM WELLS [J].
GOTTINGER, R ;
GOLD, A ;
ABSTREITER, G ;
WEIMANN, G ;
SCHLAPP, W .
EUROPHYSICS LETTERS, 1988, 6 (02) :183-188
[8]   SHUBNIKOV-DEHAAS AND HALL OSCILLATIONS IN INAS-GA1-XINXSB SUPERLATTICES [J].
HOFFMAN, CA ;
MEYER, JR ;
BARTOLI, FJ ;
WANG, WI .
PHYSICAL REVIEW B, 1993, 48 (03) :1959-1962
[9]   BAND-GAP-DEPENDENT ELECTRON AND HOLE TRANSPORT IN P-TYPE HGTE-CDTE SUPERLATTICES [J].
HOFFMAN, CA ;
MEYER, JR ;
BARTOLI, FJ ;
HAN, JW ;
COOK, JW ;
SCHETZINA, JF ;
SCHULMAN, JN .
PHYSICAL REVIEW B, 1989, 39 (08) :5208-5221
[10]   INTERFACE ROUGHNESS LIMITED ELECTRON-MOBILITY IN HGTE-CDTE SUPERLATTICES [J].
MEYER, JR ;
ARNOLD, DJ ;
HOFFMAN, CA ;
BARTOLI, FJ .
APPLIED PHYSICS LETTERS, 1991, 58 (22) :2523-2525