LARGE-HOLE DIFFUSION LENGTH AND LIFETIME IN INGAAS/INP DOUBLE-HETEROSTRUCTURE PHOTODIODES

被引：17

作者：

TROMMER, R

HOFFMANN, L

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 07期

关键词：

D O I：

10.1049/el:19860245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：360 / 362

页数：3

共 12 条

[1] DIFFUSION LENGTH OF MOLES IN N-INP [J].

DIADIUK, V ;

GROVES, SH ;

ARMIENTO, CA ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :892-894

[2]

GARBUZOV DZ, 1981, SOV PHYS SEMICOND+, V15, P218

[3]

HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997

[4] RADIATIVE AND NONRADIATIVE LIFETIMES IN N-TYPE AND P-TYPE 1.6 MU-M INGAAS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR ;

BETHEA, CG .

ELECTRONICS LETTERS, 1984, 20 (09) :358-359

[5] PERIPHERAL ELECTRON-BEAM INDUCED CURRENT RESPONSE OF A SHALLOW P-N-JUNCTION [J].

HOLLOWAY, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3669-3675

[6] GA0.47IN0.53AS - A TERNARY SEMICONDUCTOR FOR PHOTODETECTOR APPLICATIONS [J].

PEARSALL, TP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) :709-720

[7] MEASUREMENT OF DIFFUSION-COEFFICIENT AND SURFACE RECOMBINATION VELOCITY FOR P-INGAASP GROWN ON INP [J].

SAKAI, S ;

UMENO, M ;

AMEMIYA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :109-113

[8] PHOTO-EXCITED CARRIER LIFETIME AND AUGER RECOMBINATION IN 1.3-MU-M INGAASP [J].

SERMAGE, B ;

EICHLER, HJ ;

HERITAGE, JP ;

NELSON, RJ ;

DUTTA, NK .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :259-261

[9] CHARACTERIZATION OF INXGA1-XAS1-YPY EPITAXIAL LAYERS AND RELATION TO LATTICE MATCHING [J].

TAMURA, A ;

OKA, K ;

INOUE, M ;

SHIRAFUJI, J ;

INUISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :479-482

[10] MINORITY-CARRIER DIFFUSION LENGTHS IN LIQUID-PHASE EPITAXIAL INGAASP AND INGAAS [J].

TASHIMA, MM ;

COOK, LW ;

STILLMAN, GE .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :831-846

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