AMORPHOUS AND CRYSTALLINE OXIDE PRECIPITATES IN OXYGEN IMPLANTED SILICON

被引：35

作者：

VANOMMEN, AH

KOEK, BH

VIEGERS, MPA

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 11期

关键词：

D O I：

10.1063/1.97061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：628 / 630

页数：3

共 10 条

[1] INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES [J].

BENDER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01) :245-261

[2] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].

BOURRET, A ;

THIBAULTDESSEAUX, J ;

SEIDMAN, DN .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :825-836

[3]

Chen C.-E., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P702

[4]

HEMMENT PLF, 1985, P SOC PHOTO-OPT INST, V530, P230, DOI 10.1117/12.946491

[5]

HOLLAND OW, 1985, P SOC PHOTO-OPT INST, V530, P255, DOI 10.1117/12.946494

[6] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[7]

JASSAUD C, 1985, APPL PHYS LETT, V46, P1046

[8] SIMS AND O-18 TRACER STUDIES OF THE REDISTRIBUTION OF OXYGEN IN BURIED SIO2 LAYERS FORMED BY HIGH-DOSE IMPLANTATION [J].

KILNER, JA ;

CHATER, RJ ;

HEMMENT, PLF ;

PEART, RF ;

MAYDELLONDRUSZ, EA ;

TAYLOR, MR ;

ARROWSMITH, RP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :293-298

[9] AN AES INVESTIGATION INTO THE PHASE DISTRIBUTION OF ION-IMPLANTED OXYGEN IN SILICON N-CHANNEL DEVICES [J].

TUPPEN, CG ;

DAVIES, GJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1423-1427

[10]

VANOMMEN AH, UNPUB

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