CONDITIONS FOR GENERATION OF SLIP BY DIFFUSION OF PHOSPHORUS INTO SILICON

[11] OBSERVATION OF DIFFUSION-INDUCED DISLOCATION LINES IN SILICON THROUGH OPTICAL MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2593 - &

[12] LEVINE SN, 1964, MICRO THINFILM EL ED

[13] SILICON DIOXIDE PASSIVATION OF P-N JUNCTION PARTICLE DETECTORS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (01) : 50 - +

[14] MCDONALD RA, 1965, SPR M EL SOC PAP

[15] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[16] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[17] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1776 - &

[18] QUEISSER HJ, 1963, ELECTRON MICROSCOPY

[19] X-RAY OBSERVATIONS OF DIFFUSION-INDUCED DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1540 - &

[20] SCHWUTTKE GH, 1964, B AM PHYS SOC, V9, P649

[11] OBSERVATION OF DIFFUSION-INDUCED DISLOCATION LINES IN SILICON THROUGH OPTICAL MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2593 - &

[12] LEVINE SN, 1964, MICRO THINFILM EL ED

[13] SILICON DIOXIDE PASSIVATION OF P-N JUNCTION PARTICLE DETECTORS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (01) : 50 - +

[14] MCDONALD RA, 1965, SPR M EL SOC PAP

[15] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[16] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[17] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1776 - &

[18] QUEISSER HJ, 1963, ELECTRON MICROSCOPY

[19] X-RAY OBSERVATIONS OF DIFFUSION-INDUCED DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1540 - &

[20] SCHWUTTKE GH, 1964, B AM PHYS SOC, V9, P649