TI/GAAS SCHOTTKY BARRIERS PREPARED BY ION-BEAM SPUTTERING

被引：16

作者：

COLA, A

LUPO, MG

VASANELLI, L

VALENTINI, A

机构：

[1] GRP NAZL STRUTTURA MAT,INFM,LECCE,ITALY

[2] UNIV BARI,DIPARTIMENTO FIS,I-70124 BARI,ITALY

[3] GRP NAZL STRUTTURA MAT,INFM,BARI,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.350594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky barrier diodes of Ti on n-GaAs wafers were made by means of an ion beam sputtering (IBS) system under various sputtering conditions. We have investigated Schottky diode parameters by I-V and C-V measurements, and deep level centers by deep level transient spectroscopy (DLTS). The electrical characteristics are typical of good quality Ti/GaAs Schottky diodes for all samples, although a slight deterioration of the electrical performances has been observed for samples prepared at higher beam voltage. DLTS investigation shows the presence of damage defects in concentration lower than 1 x 10(14) cm-3 for all samples with the exception of those prepared at higher beam voltage. Such low concentration of defects introduced by the sputtering deposition shows that IBS can be a very useful technique to prepare Schottky barriers on GaAs.

引用

页码：4966 / 4971

页数：6

共 27 条

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