STUDY OF THE STRUCTURE AND PROPERTIES OF THE TI/GAAS INTERFACE

被引：26

作者：

KNIFFIN, M

HELMS, CR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574593

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1511 / 1515

页数：5

共 22 条

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[7] CHEMICAL DEPTH PROFILES OF THE GAAS-NATIVE OXIDE INTERFACE
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[8] KIM KH, UNPUB
[9] INTERFACIAL CHEMICAL-REACTIVITY OF METAL CONTACTS WITH THIN NATIVE OXIDES OF GAAS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 611 - 616
[10] ELECTRONIC-PROPERTIES AND CHEMISTRY OF TI/GAAS AND PD/GAAS INTERFACES
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[J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5526 - 5535