STUDY OF THE STRUCTURE AND PROPERTIES OF THE TI/GAAS INTERFACE

[11] MCCANTS CE, COMMUNICATION

[12] SCHOTTKY CONTACT FABRICATION FOR GAAS-MESFETS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1795 - 1799

[13] ANNEALING OF INTIMATE AU-GAAS SCHOTTKY BARRIERS - THICK AND ULTRATHIN METAL-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1247 - 1251

[14] DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1980 - &

[15] AUGER CHARACTERIZATION OF CHEMICALLY ETCHED GAAS SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) : 155 - 157

[16] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668

[17] NORMAL-GAAS SCHOTTKY DIODES METALLIZED WITH TI AND PT-TI [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 489 - 492

[18] TAUBENBLATT MA, 1985, G7401 STANF U TECHN

[19] THERMAL-REACTION OF TI EVAPORATED ON GAAS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (04) : 263 - 265

[20] SCHOTTKY-BARRIER HEIGHT VARIATION WITH METALLURGICAL REACTIONS IN ALUMINUM-TITANIUM-GALLIUM ARSENIDE CONTACTS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 559 - 564

[11] MCCANTS CE, COMMUNICATION

[12] SCHOTTKY CONTACT FABRICATION FOR GAAS-MESFETS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1795 - 1799

[13] ANNEALING OF INTIMATE AU-GAAS SCHOTTKY BARRIERS - THICK AND ULTRATHIN METAL-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1247 - 1251

[14] DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1980 - &

[15] AUGER CHARACTERIZATION OF CHEMICALLY ETCHED GAAS SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) : 155 - 157

[16] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668

[17] NORMAL-GAAS SCHOTTKY DIODES METALLIZED WITH TI AND PT-TI [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 489 - 492

[18] TAUBENBLATT MA, 1985, G7401 STANF U TECHN

[19] THERMAL-REACTION OF TI EVAPORATED ON GAAS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (04) : 263 - 265

[20] SCHOTTKY-BARRIER HEIGHT VARIATION WITH METALLURGICAL REACTIONS IN ALUMINUM-TITANIUM-GALLIUM ARSENIDE CONTACTS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 559 - 564