DEGRADATION AND BREAKDOWN OF GATE OXIDES IN VLSI DEVICES

被引：36

作者：

SUNE, J

PLACENCIA, I

BARNIOL, N

FARRES, E

AYMERICH, X

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 02期

关键词：

D O I：

10.1002/pssa.2211110235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：675 / 685

页数：11

共 25 条

[1]

CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[2] HOT-ELECTRONS IN SILICON DIOXIDE - BALLISTIC TO STEADY-STATE TRANSPORT [J].

DIMARIA, DJ ;

FISCHETTI, MV .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :278-297

[3] CHARGE TRAPPING AND BREAKDOWN IN THIN SIO2 POLYSILICON-GATE MOS CAPACITORS [J].

DUTOIT, M ;

FAZAN, P ;

BENJELLOUN, A ;

ILEGEMS, M ;

MORET, JM .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :333-338

[4]

FAZAN P, 1986, OCT ECS FALL M SAN D, P604

[5]

Ghidini G., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P141

[6] CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2 [J].

HARARI, E .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :601-603

[7] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J].

HARARI, E .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2478-2489

[8] ULTRA-THIN SILICON-DIOXIDE BREAKDOWN CHARACTERISTICS OF MOS DEVICES WITH N+ AND P+ POLYSILICON GATES [J].

HOLLAND, S ;

CHEN, IC ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (12) :572-575

[9] ON PHYSICAL MODELS FOR GATE OXIDE BREAKDOWN [J].

HOLLAND, S ;

CHEN, IC ;

MA, TP ;

HU, C .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :302-305

[10] CORRELATION BETWEEN BREAKDOWN AND PROCESS-INDUCED POSITIVE CHARGE TRAPPING IN THIN THERMAL SIO2 [J].

HOLLAND, S ;

HU, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) :1705-1712

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