EFFECTS OF POST-NITRIDATION ANNEALS ON RADIATION HARDNESS IN RAPID THERMAL NITRIDED GATE OXIDES

被引：16

作者：

LO, GQ

SHIH, DK

TING, W

KWONG, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 23期

关键词：

D O I：

10.1063/1.102028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2405 / 2407

页数：3

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