EFFECTS OF POST-NITRIDATION ANNEALS ON RADIATION HARDNESS IN RAPID THERMAL NITRIDED GATE OXIDES

[11] Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[12] BEHAVIOR OF THE SI/SIO2 INTERFACE OBSERVED BY FOWLER-NORDHEIM TUNNELING [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 559 - 567

[13] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657

[14] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[15] ORIGIN OF INTERFACE STATES AND OXIDE CHARGES GENERATED BY IONIZING-RADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1563 - 1568

[16] RADIATION EFFECTS IN NITRIDED OXIDES [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 191 - 193

[17] VASQUEZ RP, 1985, APPL PHYS LETT, V47, P1113

[18] EFFECTS OF THERMAL NITRIDATION ON THE TRAPPING CHARACTERISTICS OF SIO2-FILMS [J]. SOLID-STATE ELECTRONICS, 1987, 30 (09) : 939 - 946

[11] Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[12] BEHAVIOR OF THE SI/SIO2 INTERFACE OBSERVED BY FOWLER-NORDHEIM TUNNELING [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 559 - 567

[13] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657

[14] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[15] ORIGIN OF INTERFACE STATES AND OXIDE CHARGES GENERATED BY IONIZING-RADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1563 - 1568

[16] RADIATION EFFECTS IN NITRIDED OXIDES [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 191 - 193

[17] VASQUEZ RP, 1985, APPL PHYS LETT, V47, P1113

[18] EFFECTS OF THERMAL NITRIDATION ON THE TRAPPING CHARACTERISTICS OF SIO2-FILMS [J]. SOLID-STATE ELECTRONICS, 1987, 30 (09) : 939 - 946