EFFECT OF ION-IRRADIATION ON SILICIDE FORMATION IN METAL-SILICON SYSTEM WITH INTERFACIAL SILICON DIOXIDE LAYER

被引：5

作者：

HORINO, Y

MATSUNAMI, N

ITOH, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 09期

关键词：

D O I：

10.1143/JJAP.24.1218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1218 / 1223

页数：6

共 29 条

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