ELLIPSOMETRIC STUDIES OF NATURAL FILMS ON GAAS

被引：6

作者：

LUKES, F

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1988年 / 107卷 / 01期

关键词：

D O I：

10.1002/pssa.2211070125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：239 / 251

页数：13

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共 20 条

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS
ADAMS, AC
PRUNIAUX, BR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : 408 - 414
[2] OPTICAL-PROPERTIES OF GAAS AND ITS ELECTROCHEMICALLY GROWN ANODIC OXIDE FROM 1.5 TO 6.0 EV
ASPNES, DE
SCHWARTZ, GP
GUALTIERI, GJ
STUDNA, AA
SCHWARTZ, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 590 - 597
[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
[4] ELLIPSOMETRY OF ANODIC OXIDE FILMS ON GAAS
DELLOCA, CJ
YAN, G
YOUNG, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 89 - &
[5] Dinges H. W., 1983, Journal de Physique Colloque, V44, P39
[6] OXIDE-FILMS ON A(III)B(V) SEMICONDUCTORS
LOSCHKE, K
KUHN, G
BILZ, HJ
LEONHARDT, G
[J]. THIN SOLID FILMS, 1978, 48 (02) : 229 - 236
[7] ELLIPSOMETRIC LIQUID IMMERSION METHOD FOR DETERMINATION OF ALL OPTICAL PARAMETERS OF SYSTEM - NONABSORBING FILM ON AN ABSORBING SUBSTRATE
LUKES, F
KNAUSENB.WH
VEDAM, K
[J]. SURFACE SCIENCE, 1969, 16 : 112 - &
[8] ELLIPSOMETRY OF SILICON WITH NATURAL SURFACE-FILM AT 632.8 NM
LUKES, F
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1986, 94 (01): : 223 - 230
[9] LUKES F, 1970, OPTIK, V31, P83
[10] OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE
LUKES, F
[J]. SURFACE SCIENCE, 1972, 30 (01) : 91 - &