THRESHOLD REDUCTION IN STRAINED INGAAS SINGLE QUANTUM-WELL LASERS BY RAPID THERMAL ANNEALING

被引：41

作者：

YAMADA, N

ROOS, G

HARRIS, JS

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 09期

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D O I：

10.1063/1.106338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A significant reduction in lasing threshold is achieved by rapid thermal annealing (RTA) for strained InGaAs/GaAs single quantum well lasers grown by molecular beam epitaxy under standard conditions (the growth temperature is 620-degrees-C or less), not especially optimized for lasers. When RTA at 900-degrees-C for 10 s is applied twice to the wafer after the growth, the room-temperature photoluminescence efficiency of the active layer increases by about 80 times and the threshold current decreases by a factor of 5 to 7. We suggest that this enhancement is due to improvement of the quality of the InGaAs quantum well rather than that of the AlGaAs cladding layers.

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页码：1040 / 1042

页数：3

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