LOW-THRESHOLD CURRENT LOW-VOLTAGE VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH LOW-AL-CONTENT P-TYPE MIRRORS GROWN BY MOCVD

被引：9

作者：

KAWAKAMI, T

KADOTA, Y

KOHAMA, Y

TADOKORO, T

机构：

[1] NTT Opto-electronics Laboratories, Kanagawa

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 12期

关键词：

D O I：

10.1109/68.180564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs quantum-well vertical-cavity surface-emitting lasers with low-Al-content p-type mirrors grown by MOCVD have been characterized. Series resistance in p-type AlxGa1-xAs / GaAs mirrors decreases drastically as the Al content in AlxGa1-xAs decreases from AlAs. Air-post devices with a p-type Al0.6Ga0.4As / GaAs top mirror exhibit a room temperature CW threshold current of 1.8 mA at an operating voltage of 2.0 V (with a threshold power consumption of 3.6 mW).

引用

收藏

页码：1325 / 1327

页数：3

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