CHEMICAL ETCHING AND ANNEALING INDUCED GAAS(100) SURFACE-PROPERTIES

被引：15

作者：

ISMAIL, A

PALAU, JM

LASSABATERE, L

机构：

来源：

APPLIED SURFACE SCIENCE | 1984年 / 17卷 / 03期

关键词：

D O I：

10.1016/0378-5963(84)90024-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：363 / 373

页数：11

共 11 条

[1] XPS STUDY OF CHEMICALLY ETCHED GAAS AND INP
BERTRAND, PA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 28 - 33
[2] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397
[3] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS
FONASH, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289
[4] OUTLINE AND COMPARISON OF POSSIBLE EFFECTS PRESENT IN A METAL-THIN-FILM-INSULATOR-SEMICONDUCTOR SOLAR-CELL
FONASH, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3597 - 3602
[5] CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
KRAUT, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 477 - 480
[6] SUPER-SCHOTTKY DIODE AT 30 GHZ
MCCOLL, M
BOTTJER, MF
CHASE, AB
PEDERSEN, RJ
SILVER, AH
TUCKER, JR
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) : 468 - 470
[7] STUDIES ON CHEMICALLY ETCHED SILICON, GALLIUM-ARSENIDE, AND GALLIUM-PHOSPHIDE SURFACES BY AUGER-ELECTRON SPECTROSCOPY
ODA, T
SUGANO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (07) : 1317 - 1327
[8] SURFACE AND CONTACT PROPERTIES OF GAAS OVERLAID BY SILVER
PALAU, JM
TESTEMALE, E
ISMAIL, A
LASSABATERE, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 6 - 13
[9] FERMI LEVEL PINNING ON (110) GAAS-SURFACES STUDIED BY CPD AND SPV TOPOGRAPHIES
PALAU, JM
TESTEMALE, E
LASSABATERE, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 192 - 200
[10] PALAU JM, 1982, SOLID STATE ELECTRON, V24, P285

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