A NEW FIELD ISOLATION TECHNOLOGY EMPLOYING LIFT-OFF PATTERNING OF SPUTTERED SIO2-FILMS

被引：5

作者：

YACHI, T

SERIKAWA, T

WADA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期

关键词：

D O I：

10.1109/T-ED.1984.21782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1748 / 1752

页数：5

共 10 条

[1]

CHEN JY, 1982, IEDM TECH DIG, P223

[2]

Chiu K. Y., 1982, 1982 Symposium on VLSI Technology. Digest of Papers, P28

[3]

CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, pCH2

[4] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J].

KOOI, E ;

VANLIEROP, JG ;

APPELS, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1117-1120

[5]

Kurosawa K., 1981, International Electron Devices Meeting, P384

[6] SELECTIVE POLYSILICON OXIDATION TECHNOLOGY FOR VLSI ISOLATION [J].

MATSUKAWA, N ;

NOZAWA, H ;

MATSUNAGA, J ;

KOHYAMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :561-567

[7] DEGRADATION OF OXIDE-FILMS DUE TO RADIATION EFFECTS IN EXPOSURE TO PLASMAS IN SPUTTER DEPOSITION AND BACKSPUTTERING [J].

MCCAUGHAN, DV ;

KUSHNER, RA .

PROCEEDINGS OF THE IEEE, 1974, 62 (09) :1236-1241

[8] LIFT-OFF PATTERNING OF SPUTTERED SIO2-FILMS [J].

SERIKAWA, T ;

YACHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) :918-919

[9]

URBANEK K, 1977, SOLID STATE TECHNOL, V20, P87

[10] DIRECT MOAT ISOLATION FOR VLSI [J].

WANG, KL ;

SALLER, SA ;

HUNTER, WR ;

CHATTERJEE, PK ;

YANG, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :541-547

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