TUNNELING IN TILTED SI INVERSION-LAYERS

被引：21

作者：

MATHESON, TG ^{[1
]}

HIGGINS, RJ ^{[1
]}

机构：

[1] UNIV OREGON,EUGENE,OR 97403

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.25.2633

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2633 / 2644

页数：12

共 20 条

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[8] THEORY OF VALLEY SPLITTING IN AN N-CHANNEL (100) INVERSION LAYER OF SI .1. FORMULATION BY EXTENDED ZONE EFFECTIVE MASS THEORY [J].

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