ARGON ION-BOMBARDMENT INDUCED MIXING IN CO-SI - INTERFACIAL OXIDE EFFECTS

被引：8

作者：

COLLINS, RA ^{[1
]}

EDWARDS, SC ^{[1
]}

DEARNALEY, G ^{[1
]}

机构：

[1] AERE,DIV NUCL PHYS,HARWELL OX11 0RA,OXON,ENGLAND

来源：

VACUUM | 1986年 / 36卷 / 11-12期

关键词：

D O I：

10.1016/0042-207X(86)90119-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：821 / 824

页数：4

共 12 条

[1]

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CHEN, JR ;

LIAUH, HR ;

LIU, YC ;

YEH, FS .

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[3] ION-BEAM-INDUCED SILICIDE FORMATION IN NICKEL THIN-FILMS ON SILICON [J].

CHEN, LJ ;

HOU, CY .

THIN SOLID FILMS, 1983, 104 (1-2) :167-173

[4] TANTALUM AND COBALT SILICIDES - TEMPERATURE SENSOR APPLICATIONS [J].

COLLINS, RA ;

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DEARNALEY, G .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (02) :109-117

[5] CONTAMINATION EFFECTS IN ION-BEAM MIXED COBALT SILICIDE GROWTH [J].

EDWARDS, SC ;

COLLINS, RA ;

DEARNALEY, G .

VACUUM, 1984, 34 (10-1) :1017-1019

[6]

EDWARDS SC, 1986, THESIS U LANCASTER, P135

[7] COBALT SILICIDE FORMATION BY ION MIXING [J].

HAMDI, AH ;

NICOLET, MA .

THIN SOLID FILMS, 1984, 119 (04) :357-363

[8]

MURARKA SP, 1983, SILICIDES VLSI APPLI

[9] SILICIDES FOR VLSI INTERCONNECTS [J].

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TOMKINS, G .

VACUUM, 1985, 35 (10-1) :419-434

[10]

SHRETER U, 1984, ION IMPLANTATION ION, V27, P31

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