CONTAMINATION EFFECTS IN ION-BEAM MIXED COBALT SILICIDE GROWTH

被引：6

作者：

EDWARDS, SC ^{[1
]}

COLLINS, RA ^{[1
]}

DEARNALEY, G ^{[1
]}

机构：

[1] AERE,DIV NUCL PHYS,HARWELL OX11 0RA,OXON,ENGLAND

来源：

VACUUM | 1984年 / 34卷 / 10-1期

关键词：

ION BEAMS - Applications;

D O I：

10.1016/0042-207X(84)90190-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of cobalt silicides using 200 keV Ar** plus ion beam mixing has been studied as a function of subsequent vacuum optical annealing at temperatures in the range 500-700 degree C. Elemental intermixing and silicide stoichiometry were studied using Rutherford alpha backscattering. The effects of Ar** plus ion dose on cobalt films thermally evaporated in poor vacuum (10** minus **5 torr) and high vacuum (5 multiplied by 10** minus **9 torr) have been investigated. Dose dependence studies showed that whilst the high-vacuum deposited films formed stoichiometric silicides with zero bombardment dose over the whole temperature range, the contaminated Co film samples required a minimum bombardment dose dependent on temperature.

引用

页码：1017 / 1019

页数：3

共 10 条

[1] ION-BEAM-INDUCED SILICIDE FORMATION IN NICKEL THIN-FILMS ON SILICON [J].