SIMULTANEOUS FORMATION OF A SHALLOW SILICON P-N-JUNCTION AND A SHALLOW SILICIDE SILICON OHMIC CONTACT BY AN ION-IMPLANTATION TECHNIQUE

被引：10

作者：

TSAUR, BY

ANDERSON, CH

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 09期

关键词：

D O I：

10.1063/1.93683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：877 / 879

页数：3

共 15 条

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