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SILICIDES FOR VLSI INTERCONNECTS
被引:22
作者
:
ROSSER, P
论文数:
0
引用数:
0
h-index:
0
ROSSER, P
TOMKINS, G
论文数:
0
引用数:
0
h-index:
0
TOMKINS, G
机构
:
来源
:
VACUUM
|
1985年
/ 35卷
/ 10-1期
关键词
:
D O I
:
10.1016/0042-207X(85)90361-6
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:419 / 434
页数:16
相关论文
共 55 条
[1]
ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION
[J].
AMANO, J
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
AMANO, J
;
MERCHANT, P
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
MERCHANT, P
;
KOCH, T
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
KOCH, T
.
APPLIED PHYSICS LETTERS,
1984,
44
(08)
:744
-746
[2]
THERMAL-OXIDATION OF TRANSITION-METAL SILICIDES ON SI - SUMMARY
[J].
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
;
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(02)
:371
-375
[3]
PROPERTIES OF SIO2 GROWN ON TI, CO, NI, PD, AND PT SILICIDES
[J].
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
;
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
.
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(01)
:81
-94
[4]
TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM
[J].
BERTI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
BERTI, M
;
DRIGO, AV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
DRIGO, AV
;
COHEN, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
COHEN, C
;
SIEJKA, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
SIEJKA, J
;
BENTINI, GG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
BENTINI, GG
;
NIPOTI, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
NIPOTI, R
;
GUERRI, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
GUERRI, S
.
JOURNAL OF APPLIED PHYSICS,
1984,
55
(10)
:3558
-3565
[5]
SELF-REGISTERED MOLYBDENUM-GATE MOSFET
[J].
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
;
ENGELER, WE
论文数:
0
引用数:
0
h-index:
0
ENGELER, WE
;
GARFINKEL, M
论文数:
0
引用数:
0
h-index:
0
GARFINKEL, M
;
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(08)
:874
-+
[6]
REFRACTORY METAL SILICON DEVICE TECHNOLOGY
[J].
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, NY
BROWN, DM
;
ENGELER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, NY
ENGELER, WE
;
GARFINKEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, NY
GARFINKEL, M
;
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, NY
GRAY, PV
.
SOLID-STATE ELECTRONICS,
1968,
11
(12)
:1105
-+
[7]
CARTER DL, 1984, VLSI DESIGN JAN, P63
[8]
INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE
[J].
CHEN, JR
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
CHEN, JR
;
LIU, YC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
LIU, YC
;
CHU, SD
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
CHU, SD
.
APPLIED PHYSICS LETTERS,
1982,
40
(03)
:263
-265
[9]
SILANE SILICIDATION OF MO THIN-FILMS
[J].
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
CHOW, TP
;
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
BROWN, DM
;
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
STECKL, AJ
;
GARFINKEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
GARFINKEL, M
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(11)
:5981
-5985
[10]
REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY
[J].
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
CHOW, TP
;
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
STECKL, AJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(11)
:1480
-1497
←
1
2
3
4
5
6
→
共 55 条
[1]
ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION
[J].
AMANO, J
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
AMANO, J
;
MERCHANT, P
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
MERCHANT, P
;
KOCH, T
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
KOCH, T
.
APPLIED PHYSICS LETTERS,
1984,
44
(08)
:744
-746
[2]
THERMAL-OXIDATION OF TRANSITION-METAL SILICIDES ON SI - SUMMARY
[J].
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
;
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(02)
:371
-375
[3]
PROPERTIES OF SIO2 GROWN ON TI, CO, NI, PD, AND PT SILICIDES
[J].
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
;
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
.
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(01)
:81
-94
[4]
TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM
[J].
BERTI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
BERTI, M
;
DRIGO, AV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
DRIGO, AV
;
COHEN, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
COHEN, C
;
SIEJKA, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
SIEJKA, J
;
BENTINI, GG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
BENTINI, GG
;
NIPOTI, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
NIPOTI, R
;
GUERRI, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
GUERRI, S
.
JOURNAL OF APPLIED PHYSICS,
1984,
55
(10)
:3558
-3565
[5]
SELF-REGISTERED MOLYBDENUM-GATE MOSFET
[J].
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
;
ENGELER, WE
论文数:
0
引用数:
0
h-index:
0
ENGELER, WE
;
GARFINKEL, M
论文数:
0
引用数:
0
h-index:
0
GARFINKEL, M
;
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(08)
:874
-+
[6]
REFRACTORY METAL SILICON DEVICE TECHNOLOGY
[J].
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, NY
BROWN, DM
;
ENGELER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, NY
ENGELER, WE
;
GARFINKEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, NY
GARFINKEL, M
;
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, NY
GRAY, PV
.
SOLID-STATE ELECTRONICS,
1968,
11
(12)
:1105
-+
[7]
CARTER DL, 1984, VLSI DESIGN JAN, P63
[8]
INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE
[J].
CHEN, JR
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
CHEN, JR
;
LIU, YC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
LIU, YC
;
CHU, SD
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
CHU, SD
.
APPLIED PHYSICS LETTERS,
1982,
40
(03)
:263
-265
[9]
SILANE SILICIDATION OF MO THIN-FILMS
[J].
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
CHOW, TP
;
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
BROWN, DM
;
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
STECKL, AJ
;
GARFINKEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,INTEGRATED CIRCUITS LAB,DEPT ELECT & SYST ENGN,TROY,NY 12181
GARFINKEL, M
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(11)
:5981
-5985
[10]
REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY
[J].
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
CHOW, TP
;
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
STECKL, AJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(11)
:1480
-1497
←
1
2
3
4
5
6
→