CONTACT METALLURGY DEVELOPMENT FOR VLSI LOGIC

被引：15

作者：

GEFFKEN, RM

RYAN, JG

SLUSSER, GJ

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1987年 / 31卷 / 06期

关键词：

D O I：

10.1147/rd.316.0608

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：608 / 616

页数：9

共 16 条

[1]

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[4]

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[9] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].

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[10] TI AND V LAYERS RETARD INTERACTION BETWEEN AL FILMS AND POLYCRYSTALLINE SI [J].

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