KINETIC MANY-BODY MODEL OF RECRYSTALLIZATION OF PURE AND DOPED AMORPHOUS-SILICON

被引：29

作者：

KHAIT, YL

BESERMAN, R

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

[2] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-32000 HAIFA,ISRAEL

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2983

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2983 / 2986

页数：4

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