IN-SITU OBSERVATION OF SURFACE-MORPHOLOGY IN INP GROWN ON SINGULAR AND VICINAL (001) SUBSTRATES

被引：3

作者：

BERTNESS, KA ^{[1
]}

KRAMER, C ^{[1
]}

OLSON, JM ^{[1
]}

MORELAND, J ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,DIV ELECTROMAGNET,BOULDER,CO 80303

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 02期

关键词：

INDIUM PHOSPHIDE; ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE); SUBSTRATE ORIENTATION; SURFACE MORPHOLOGY;

D O I：

10.1007/BF02655269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface morphology of InP layers is monitored during organometallic vapor phase epitaxy using an in situ diffuse laser light scattering technique. Changes in the diffuse scatter signal are noted for several substrate orientations near the (001) plane and at various growth temperatures. The diffuse scatter signal is shown to be a semi-quantitative indicator of surface roughness through post-growth examination of the samples with phase contrast optical microscopy and atomic force microscopy. Singular substrates consistently have almost featureless surfaces and very little diffuse scattering during growth. Vicinal substrates display a more complicated morphological evolution which cannot be deduced from the diffuse scattering alone but which does produce characteristic changes in diffuse scattering.

引用

页码：195 / 200

页数：6

共 17 条

[1] AN ATOMIC-RESOLUTION ATOMIC-FORCE MICROSCOPE IMPLEMENTED USING AN OPTICAL-LEVER [J].

ALEXANDER, S ;

HELLEMANS, L ;

MARTI, O ;

SCHNEIR, J ;

ELINGS, V ;

HANSMA, PK ;

LONGMIRE, M ;

GURLEY, J .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) :164-167

[2] REFLECTANCE DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH TRANSIENTS ON (001) GAAS [J].

ASPNES, DE ;

BHAT, R ;

COLAS, E ;

KERAMIDAS, VG ;

KOZA, MA ;

STUDNA, AA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :711-716

[3] ORIENTATION DEPENDENCE OF S, ZN, SI, TE, AND SN DOPING IN OMCVD GROWTH OF INP AND GAAS - APPLICATION TO DH LASERS AND LATERAL P-N-JUNCTION ARRAYS GROWN ON NONPLANAR SUBSTRATES [J].

BHAT, R ;

CANEAU, C ;

ZAH, CE ;

KOZA, MA ;

BONNER, WA ;

HWANG, DM ;

SCHWARZ, SA ;

MENOCAL, SG ;

FAVIRE, FG .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :772-778

[4] RELATIONSHIP BETWEEN SURFACE SCATTERING AND MICROTOPOGRAPHIC FEATURES [J].

CHURCH, EL ;

JENKINSON, HA ;

ZAVADA, JM .

OPTICAL ENGINEERING, 1979, 18 (02) :125-136

[5] ATOMIC SCALE CHARACTERIZATION OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH USING INSITU GRAZING-INCIDENCE X-RAY-SCATTERING [J].

KISKER, DW ;

STEPHENSON, GB ;

FUOSS, PH ;

LAMELAS, FJ ;

BRENNAN, S ;

IMPERATORI, P .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :1-9

[6] OPTICAL INVESTIGATION ON THE GROWTH-PROCESS OF GAAS DURING MIGRATION-ENHANCED EPITAXY [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1880-L1882

[7] DIFFUSE OPTICAL REFLECTIVITY MEASUREMENTS ON GAAS DURING MOLECULAR-BEAM EPITAXY PROCESSING [J].

LAVOIE, C ;

JOHNSON, SR ;

MACKENZIE, JA ;

TIEDJE, T ;

VANBUUREN, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :930-933

[8] LOW-TEMPERATURE (10-K) PHOTOLUMINESCENCE OF GA1-XINXPYAS1-Y QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

LUDOWISE, MJ ;

BISWAS, D ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1990, 56 (10) :958-960

[9] THE ROLE OF STEP KINETICS IN MBE OF COMPOUND SEMICONDUCTORS [J].

NISHINAGA, T ;

SUZUKI, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :398-405

[10]

OLSON JA, 1989, J NUTR EDUC, V21, P59

← 1 2 →