DIODE-LASER FABRICATION USING PROTON-BOMBARDMENT OF PBTE

被引：7

作者：

STAUDTE, DM

BRYANT, FJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 02期

关键词：

D O I：

10.1016/0038-1101(83)90108-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：83 / 90

页数：8

共 21 条

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STAUDTE, DM .

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[7] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J].

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[8]

EGER D, 1981, APPL PHYS LETT, V39, P471, DOI 10.1063/1.92777

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[10]

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