共 20 条
- [1] ALONSO M, IN PRESS
- [2] AN AES-ELEED STUDY OF THE AL/GAP(110) INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 588 - 591
- [3] BONAPACE CR, 1983, J VAC SCI TECHNOL B, V1, P613
- [4] DUALITY IN FERMI-LEVEL PINNING AT CU/INP(110) AND AG/INP(110) INTERFACES [J]. PHYSICAL REVIEW B, 1989, 39 (15): : 11146 - 11149
- [5] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002
- [6] METALLIZATION AND FERMI-LEVEL MOVEMENT AT THE CS/GAAS(110) INTERFACES [J]. PHYSICAL REVIEW B, 1989, 39 (17): : 12655 - 12663
- [7] INDIUM INTERACTION WITH GAP(110) - EXAMPLE OF AN UNREACTED INTERFACE [J]. VACUUM, 1990, 41 (4-6) : 835 - 838
- [8] SCHOTTKY-LIKE BEHAVIOR OF THE GAP(110)/AG INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 195 - 198
- [9] UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES - A REPRESENTATIVE III-V COMPOUND INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1075 - 1079
- [10] CIMINO R, 1990, VACUUM, V41, P1062