A mathematical model for epitaxial growth on nonplanar substrates

被引：4

作者：

Dominguez, PS

Briones, F

机构：

[1] Centro Nacional de Microelectrónica (CSIC), E-28006 Madrid

来源：

MICROELECTRONICS JOURNAL | 1995年 / 26卷 / 08期

关键词：

D O I：

10.1016/0026-2692(95)00033-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new mathematical model devised to simulate growth on patterned substrates is described. Its aim is not to predict the evolution of the shape of any substrate during epitaxy, but to determine the value of the different kinetic parameters involved in the growth (mean lifetime before incorporation or desorption, surface diffusion length and diffusion coefficient of group III adatoms on the various crystalline facets), just by fitting the output of the program to the experimental epitaxial growth results. A simulation of GaAs MBE growth on a patterned substrate is included as an illustration of its operation.

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收藏

页码：751 / 757

页数：7

相关论文

共 9 条

[1] CHEMICAL ETCHING OF GAAS [J].

ADACHI, S ;

OE, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (01) :126-130

[2] INDIUM ADATOM MIGRATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS [J].

ARENT, DJ ;

NILSSON, S ;

GALEUCHET, YD ;

MEIER, HP ;

WALTER, W .

APPLIED PHYSICS LETTERS, 1989, 55 (25) :2611-2613

[3] NONPLANAR STEP AND TERRACE CONFIGURATED SURFACES AS TEMPLATES FOR CRYSTAL-GROWTH DYNAMICS STUDIES [J].

COLAS, E ;

NIHOUS, GC ;

HWANG, DM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :691-696

[4] DISTRIBUTIONS OF GROWTH-RATES ON PATTERNED SURFACES MEASURED BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

HATA, M ;

ISU, T ;

WATANABE, A ;

KATAYAMA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :692-696

[5] MOLECULAR-BEAM EPITAXY [J].

JOYCE, BA .

REPORTS ON PROGRESS IN PHYSICS, 1985, 48 (12) :1637-1697

[6] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES [J].

KAPON, E ;

TAMARGO, MC ;

HWANG, DM .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :347-349

[7] MODEL FOR MOLECULAR-BEAM-EPITAXY GROWTH OVER NONPLANAR SURFACES [J].

OHTSUKA, M ;

MIYAZAWA, S .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3522-3527

[8] THEORY OF EPITAXIAL-GROWTH ONTO NONPLANAR SUBSTRATES [J].

OZDEMIR, M ;

ZANGWILL, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :684-690

[9] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].

TSANG, WT ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :293-296