DEEP LEVELS IN SEMI-INSULATING LEC GAAS BEFORE AND AFTER SILICON IMPLANTATION

被引：5

作者：

DINDO, S

ABDELMOTALEB, I

LOWE, K

TANG, W

YOUNG, L

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

D O I：

10.1149/1.2113646

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2673 / 2677

页数：5

相关论文

共 31 条

[1] ALDERSTEIN MG, 1976, ELECTRON LETT, V12, P297
[2] ASAI S, 1973, J JAPAN SOC APPL P S, V42, P71
[3] SOME PROPERTIES OF SEMI-INSULATING AND SI-IMPLANTED GAAS
BHATTACHARYA, PK
RHEE, JK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1152 - 1159
[4] RECOIL PROFILES PRODUCED BY ION-IMPLANTATION THROUGH DIELECTRIC LAYERS
BLUNT, RT
SWEDA, R
SANDERS, IR
[J]. VACUUM, 1984, 34 (1-2) : 281 - 284
[5] DILORENZO JV, 1982, GAAS FET PRINCIPLES
[6] FAIRMAN RD, 1979, I PHYS C SER, V45, P134
[7] THE ROLE OF DEFECTS IN THE DIFFUSION AND ACTIVATION OF IMPURITIES IN ION-IMPLANTED SEMICONDUCTORS
FARLEY, CW
STREETMAN, BG
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) : 401 - 436
[8] Ghandhi S.K, 1995, VLSI FABRICATION PRI
[9] TEMPERATURE-DEPENDENCE OF FET PROPERTIES FOR CR-DOPED AND LEC SEMI-INSULATING GAAS SUBSTRATES
HICKMOTT, TW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 54 - 62
[10] HOUNG YM, 1978, J APPL PHYS, V49, P3248

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