THE EFFECTS OF DEEP LEVELS IN GAAS-MESFETS

被引：17

作者：

ZYLBERSZTEJN, A

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90437-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：44 / 49

页数：6

共 34 条

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FENG, M ;

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[9] BACKGATING AND LIGHT SENSITIVITY IN ION-IMPLANTED GAAS INTEGRATED-CIRCUITS [J].

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VAITKUS, RL .

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[10] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J].

HOUNG, YM ;

PEARSON, GL .

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