EXPERIMENTAL-STUDY OF HOT CARRIERS IN SMALL SIZE SI-MOSFETS

被引：19

作者：

TORIUMI, A ^{[1
]}

机构：

[1] TOSHIBA CO LTD,ULSI RES CTR,KAWASAKI 210,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90267-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1519 / 1525

页数：7

共 36 条

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