We report on the detection of process-induced defects in silicon using time-resolved reflectivity measurements with ultra-short laser pulses. Quantitative information on damage levels and spatial extent of damage distribution are evaluated from the temporal evolution of reflectivity changes. The surface damage induced by various etching processes is investigated by this nondestructive method. By combining transient reflectivity measurements with subsequent etching steps the method is extended to optical depth profiling of implantation damage.