PHOTOINDUCED TRANSIENT REFLECTANCE INVESTIGATION OF PROCESS-INDUCED NEAR-SURFACE DEFECTS IN SILICON

被引:3
作者
ESSER, A
MAIDORN, G
KURZ, H
机构
[1] Institute for Semiconductor Electronics II, RWTH Aachen
关键词
D O I
10.1016/0169-4332(92)90091-B
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report on the detection of process-induced defects in silicon using time-resolved reflectivity measurements with ultra-short laser pulses. Quantitative information on damage levels and spatial extent of damage distribution are evaluated from the temporal evolution of reflectivity changes. The surface damage induced by various etching processes is investigated by this nondestructive method. By combining transient reflectivity measurements with subsequent etching steps the method is extended to optical depth profiling of implantation damage.
引用
收藏
页码:482 / 489
页数:8
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