HIGH-PERFORMANCE HYDROGENATED AMORPHOUS-SILICON SOLAR-CELLS MADE AT A HIGH DEPOSITION RATE BY GLOW-DISCHARGE OF DISILANE

被引：10

作者：

OHASHI, Y ^{[1
]}

KENNE, J ^{[1
]}

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.93830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1028 / 1030

页数：3

共 11 条

[1] AMORPHOUS SILICON SOLAR-CELLS [J].

CARLSON, DE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :449-453

[2] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1) [J].

GAU, SC ;

WEINBERGER, BR ;

AKHTAR, M ;

KISS, Z ;

MACDIARMID, AG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :436-438

[3] GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS [J].

KNIGHTS, JC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :159-170

[4] EFFECTS OF INERT-GAS DILUTION OF SILANE ON PLASMA-DEPOSITED A-SI-H FILMS [J].

KNIGHTS, JC ;

LUJAN, RA ;

ROSENBLUM, MP ;

STREET, RA ;

BIEGLESEN, DK ;

REIMER, JA .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :331-333

[5]

KONAGAI M, 1982, 16TH IEEE PHOT SPEC

[6] HIGH-RATE DEPOSITION OF A-SI - H FILM USING THE DECOMPOSITION OF MONO-SILANE [J].

NAKAYAMA, Y ;

NATSUHARA, T ;

NAGASAWA, N ;

KAWAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (10) :L604-L606

[7] PREPARATIONS OF A-SI-H FROM HIGHER SILANES (SINH2N+2) WITH THE HIGH GROWTH-RATE [J].

OGAWA, K ;

SHIMIZU, I ;

INOUE, E .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :L639-L642

[8] GLOW-DISCHARGE PREPARATION OF AMORPHOUS HYDROGENATED SILICON FROM HIGHER SILANES [J].

SCOTT, BA ;

BRODSKY, MH ;

GREEN, DC ;

KIRBY, PB ;

PLECENIK, RM ;

SIMONYI, EE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :725-727

[9]

TAWADA Y, 1982, 4TH EC PHOT SOL EN C

[10]

UCHIDA Y, 1982, JPN J APPL PHYS, V21, P1586

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