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LATERAL DOPANT TRANSPORT DURING LASER RECRYSTALLIZATION OF POLYSILICON
被引:5
作者
:
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1983年
/ 42卷
/ 09期
关键词
:
D O I
:
10.1063/1.94079
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:832 / 834
页数:3
相关论文
共 7 条
[1]
ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING
[J].
BAERI, P
论文数:
0
引用数:
0
h-index:
0
BAERI, P
;
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
CAMPISANO, SU
;
FOTI, G
论文数:
0
引用数:
0
h-index:
0
FOTI, G
;
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
RIMINI, E
.
APPLIED PHYSICS LETTERS,
1978,
33
(02)
:137
-140
[2]
SEEDED OSCILLATORY GROWTH OF SI OVER SIO2 BY CW LASER IRRADIATION
[J].
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
CELLER, GK
;
TRIMBLE, LE
论文数:
0
引用数:
0
h-index:
0
TRIMBLE, LE
;
NG, KK
论文数:
0
引用数:
0
h-index:
0
NG, KK
;
LEAMY, HJ
论文数:
0
引用数:
0
h-index:
0
LEAMY, HJ
;
BAUMGART, H
论文数:
0
引用数:
0
h-index:
0
BAUMGART, H
.
APPLIED PHYSICS LETTERS,
1982,
40
(12)
:1043
-1045
[3]
DICKEY DH, 1963, EXT ABSTR EL SOC, V12, P151
[4]
LATERAL EPITAXIAL RECRYSTALLIZATION OF DEPOSITED SILICON FILMS ON SILICON DIOXIDE
[J].
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
KAMINS, TI
;
CASS, TR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
CASS, TR
;
DELLOCA, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
DELLOCA, CJ
;
LEE, KF
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
LEE, KF
;
PEASE, RFW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
PEASE, RFW
;
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
GIBBONS, JF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(05)
:1151
-1154
[5]
SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS
[J].
LAM, HW
论文数:
0
引用数:
0
h-index:
0
LAM, HW
;
PINIZZOTTO, RF
论文数:
0
引用数:
0
h-index:
0
PINIZZOTTO, RF
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
TASCH, AF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(09)
:1981
-1986
[6]
LASER-INDUCED LATERAL EPITAXIAL-GROWTH OF SILICON OVER SILICON DIOXIDE WITH LOCALLY VARIED ENCAPSULATION
[J].
SAKURAI, J
论文数:
0
引用数:
0
h-index:
0
SAKURAI, J
;
KAWAMURA, S
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, S
;
NAKANO, M
论文数:
0
引用数:
0
h-index:
0
NAKANO, M
;
TAKAGI, M
论文数:
0
引用数:
0
h-index:
0
TAKAGI, M
.
APPLIED PHYSICS LETTERS,
1982,
41
(01)
:64
-67
[7]
MODEL FOR NON-EQUILIBRIUM SEGREGATION DURING PULSED LASER ANNEALING
[J].
WOOD, RF
论文数:
0
引用数:
0
h-index:
0
WOOD, RF
.
APPLIED PHYSICS LETTERS,
1980,
37
(03)
:302
-304
←
1
→
共 7 条
[1]
ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING
[J].
BAERI, P
论文数:
0
引用数:
0
h-index:
0
BAERI, P
;
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
CAMPISANO, SU
;
FOTI, G
论文数:
0
引用数:
0
h-index:
0
FOTI, G
;
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
RIMINI, E
.
APPLIED PHYSICS LETTERS,
1978,
33
(02)
:137
-140
[2]
SEEDED OSCILLATORY GROWTH OF SI OVER SIO2 BY CW LASER IRRADIATION
[J].
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
CELLER, GK
;
TRIMBLE, LE
论文数:
0
引用数:
0
h-index:
0
TRIMBLE, LE
;
NG, KK
论文数:
0
引用数:
0
h-index:
0
NG, KK
;
LEAMY, HJ
论文数:
0
引用数:
0
h-index:
0
LEAMY, HJ
;
BAUMGART, H
论文数:
0
引用数:
0
h-index:
0
BAUMGART, H
.
APPLIED PHYSICS LETTERS,
1982,
40
(12)
:1043
-1045
[3]
DICKEY DH, 1963, EXT ABSTR EL SOC, V12, P151
[4]
LATERAL EPITAXIAL RECRYSTALLIZATION OF DEPOSITED SILICON FILMS ON SILICON DIOXIDE
[J].
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
KAMINS, TI
;
CASS, TR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
CASS, TR
;
DELLOCA, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
DELLOCA, CJ
;
LEE, KF
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
LEE, KF
;
PEASE, RFW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
PEASE, RFW
;
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
GIBBONS, JF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(05)
:1151
-1154
[5]
SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS
[J].
LAM, HW
论文数:
0
引用数:
0
h-index:
0
LAM, HW
;
PINIZZOTTO, RF
论文数:
0
引用数:
0
h-index:
0
PINIZZOTTO, RF
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
TASCH, AF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(09)
:1981
-1986
[6]
LASER-INDUCED LATERAL EPITAXIAL-GROWTH OF SILICON OVER SILICON DIOXIDE WITH LOCALLY VARIED ENCAPSULATION
[J].
SAKURAI, J
论文数:
0
引用数:
0
h-index:
0
SAKURAI, J
;
KAWAMURA, S
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, S
;
NAKANO, M
论文数:
0
引用数:
0
h-index:
0
NAKANO, M
;
TAKAGI, M
论文数:
0
引用数:
0
h-index:
0
TAKAGI, M
.
APPLIED PHYSICS LETTERS,
1982,
41
(01)
:64
-67
[7]
MODEL FOR NON-EQUILIBRIUM SEGREGATION DURING PULSED LASER ANNEALING
[J].
WOOD, RF
论文数:
0
引用数:
0
h-index:
0
WOOD, RF
.
APPLIED PHYSICS LETTERS,
1980,
37
(03)
:302
-304
←
1
→