STATIC AND DYNAMIC LATCHUP IN THE LIGBT

被引：11

作者：

FOSSUM, JG

KIM, YS

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 11期

关键词：

D O I：

10.1109/16.7413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1977 / 1985

页数：9

共 17 条

[1] COUNTERDOPING OF MOS CHANNEL (CDC) - A NEW TECHNIQUE OF IMPROVING SUPPRESSION OF LATCHING IN INSULATED GATE BIPOLAR-TRANSISTORS [J].

CHOW, TP ;

BALIGA, BJ ;

PATTANAYAK, DN .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :29-31

[2]

CHOW TP, 1987, IEDM, P774

[3] COMPUTATION OF STEADY-STATE CMOS LATCHUP CHARACTERISTICS [J].

COUGHRAN, WM ;

PINTO, MR ;

SMITH, RK .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (02) :307-323

[4] LATERAL RESURFED COMFET [J].

DARWISH, M ;

BOARD, K .

ELECTRONICS LETTERS, 1984, 20 (12) :519-520

[5]

Darwish M. N., 1987, Proceedings of the Symposium on High Voltage and Smart Power Devices, P295

[6] PARTITIONED-CHARGE-BASED MODELING OF BIPOLAR-TRANSISTORS FOR NON-QUASI-STATIC CIRCUIT SIMULATION [J].

FOSSUM, JG ;

VEERARAGHAVAN, S .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :652-654

[7] NETWORK REPRESENTATIONS OF LIGBT STRUCTURES FOR CAD OF POWER INTEGRATED-CIRCUITS [J].

FOSSUM, JG ;

MCDONALD, RJ ;

SHIBIB, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) :507-515

[8] CHARGE-CONTROL ANALYSIS OF THE COMFET TURN-OFF TRANSIENT [J].

FOSSUM, JG ;

MCDONALD, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1377-1382

[9] AN ANALOG DIGITAL BCDMOS TECHNOLOGY WITH DIELECTRIC ISOLATION - DEVICES AND PROCESSES [J].

LU, CY ;

TSAI, NS ;

DUNN, CN ;

RIFFE, PC ;

SHIBIB, MA ;

FURNANAGE, RA ;

GOODWIN, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (02) :230-239

[10] N-CHANNEL LATERAL INSULATED GATE TRANSISTORS .1. STEADY-STATE CHARACTERISTICS [J].

PATTANAYAK, DN ;

ROBINSON, AL ;

CHOW, TP ;

ADLER, MS ;

BALIGA, BJ ;

WILDI, EJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (12) :1956-1963

← 1 2 →