HIGH-SPEED CRYSTAL-GROWTH AND SOLIDIFICATION USING LASER-HEATING

[1] APPLETON BR, 1982, MATER RES SOC P, V4

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[3] AZIZ MJ, 1986, MATER RES SOC P, V57

[4] BAGLEY BG, 1979, AIP C P, V50, P97

[5] BIEGELSEN DK, 1985, MRS MATER RES SOC P, V35

[6] SI LIQUID-AMORPHOUS TRANSITION AND IMPURITY SEGREGATION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 846 - 848

[7] GROWTH INTERFACE BREAKDOWN DURING LASER RECRYSTALLIZATION FROM THE MELT [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 642 - 644

[8] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 547 - 550

[9] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1795 - 1804

[10] FAN JCC, 1984, MRS MATER RES SOC P, V23

[1] APPLETON BR, 1982, MATER RES SOC P, V4

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[3] AZIZ MJ, 1986, MATER RES SOC P, V57

[4] BAGLEY BG, 1979, AIP C P, V50, P97

[5] BIEGELSEN DK, 1985, MRS MATER RES SOC P, V35

[6] SI LIQUID-AMORPHOUS TRANSITION AND IMPURITY SEGREGATION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 846 - 848

[7] GROWTH INTERFACE BREAKDOWN DURING LASER RECRYSTALLIZATION FROM THE MELT [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 642 - 644

[8] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 547 - 550

[9] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1795 - 1804

[10] FAN JCC, 1984, MRS MATER RES SOC P, V23