PHOTOLUMINESCENCE AND RAMAN STUDIES OF RESIDUAL-STRESSES IN GAAS DIRECTLY GROWN ON INP

被引：15

作者：

FREUNDLICH, A ^{[1
]}

GRENET, JC ^{[1
]}

NEU, G ^{[1
]}

LANDA, G ^{[1
]}

CARLES, R ^{[1
]}

机构：

[1] UNIV PAUL SABATIER,PHYS SOLIDES LAB,CNRS,UA 74,F-31002 TOULOUSE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 15期

关键词：

D O I：

10.1063/1.102243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1558 / 1560

页数：3

共 14 条

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[9]

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