SYNCHROTRON RADIATION-ASSISTED SILICON HOMOEPITAXY AT 100-DEGREES-C USING SI2H6/H2 MIXTURE

Epitaxial silicon film is deposited on a Si(100) substrate by synchrotron radiation irradiation. Reflection high-energy electron diffraction and high-resolution transmittance electron microscopy observation reveal that epitaxial growth can be realized at temperatures as low as 100-degrees-C. At substrate temperatures above 300-degrees-C, the films show a clear 2x1 reconstructed surface, indicating a fairly good crystal quality. Below 500-degrees-C, the growth rate increases as the substrate temperature is lowered, meaning that the surface adsorption of source gas and/or photogenerated radicals plays an important role in the epitaxial growth reaction.