CORRELATION OF THE FINE-STRUCTURE OF IN M4.5N4.5N4.5 AUGER SPECTRUM AND THERMAL-DEGRADATION AT INP SURFACES

被引：25

作者：

MASSIES, J ^{[1
]}

LEMAIREDEZALY, F ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3136 / 3139

页数：4

共 21 条

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[2] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
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[3] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292
[4] STABILIZATION OF SURFACES OF III .5. COMPOUND CRYSTALS BY MOLECULAR-BEAMS
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[5] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448
[6] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &
[7] SILVER CONTACT ON GAAS (001) AND INP (001)
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[8] MISMATCH AND ELECTRON-MOBILITY IN MBE GAXIN1-XAS EPITAXIAL LAYERS ON INP SUBSTRATES
MASSIES, J
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (01): : 27 - 30
[9] HIGH-MOBILITY GA0.47IN0.53AS THIN EPITAXIAL LAYERS GROWN BY MBE, VERY CLOSELY LATTICE-MATCHED TO INP
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CHEVRIER, J
LINH, NT
[J]. ELECTRONICS LETTERS, 1982, 18 (18) : 758 - 760
[10] ON THE GROWTH OF SILVER ON GAAS(001) SURFACES
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[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) : 25 - 38

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